The JANTX2N6796 is a 100V N-channel power MOSFET manufactured by Infineon, designed for high-reliability switching and power management. Housed in a hermetic TO‑39 metal can, the device delivers strong thermal dissipation and environmental resilience against moisture, shock, and vibration. The N-channel enhancement-mode structure supports straightforward gate drive from logic or driver stages, with a gate threshold voltage refined for consistent behavior across the full military temperature range. Typical characteristics include a 100V drain-source breakdown voltage, low on-state resistance to reduce conduction losses, and a fast intrinsic body diode suited for inductive load clamping and commutation.
Qualified to the JANTX level of MIL‑PRF‑19500, this MOSFET is intended for mission-critical aerospace, defense, and industrial systems that demand long service life and ruggedness. Representative applications include DC‑DC converters, motor drive circuits, actuator controls, and power distribution in satellite payloads, avionics, and missile platforms. Procurement teams should note that the JANTX prefix confirms full military screening and JAN brand traceability, while the QPL listing provides continuity of supply and helps avoid redesign due to obsolescence. Design engineers must reference the latest Infineon source control drawing and procure through authorized franchised distributors to secure lot‑level traceability and mitigate counterfeit risk.
| Attribute | Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 28.51 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/557 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-205AF (TO-39) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Continuous Drain Current @ TC=100°C | 5.0 A |
| Continuous Drain Current @ TC=25°C | 8.0 A |
| Drain-to-Source Breakdown Voltage | 100 V min |
| Gate Threshold Voltage | 2.0 V min / 4.0 V max |
| Gate-to-Source Voltage | ±20 V |
| Max Power Dissipation @ TC=25°C | 25 W |
| Pulsed Drain Current | 32 A |
| Static Drain-to-Source On-State Resistance | 0.18 Ω max @ VGS=10V, ID=5.0A |
| Static Drain-to-Source On-State Resistance (full ID) | 0.207 Ω max @ VGS=10V, ID=8.0A |
| Operating Junction Temperature | -55 to 150 °C |
| Base Device | 2N6796 |
| Device Type | N-channel HEXFET power MOSFET (repetitive avalanche and dv/dt rated) |
| Forward Transconductance | 3.0 S min |
| Screening Level | JANTX |
| Single Pulse Avalanche Energy | 75 mJ |
| Total Gate Charge | 28.5 nC max(min 12.8 nC) |
Download the current available datasheet for JANTX2N6796.
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