IRFF130

The IRFF130 from Infineon is a 100V N-channel power MOSFET engineered for high-reliability switching and amplification, housed in a hermetic TO-39 (TO-205AF) metal can package. Leveraging planar DMOS technology, the device offers low on-state resistance and fast switching characteristics across a wide operating temperature range. The welded hermetic structure provides superior environmental isolation, thermal dissipation, and long-term stability under mechanical stress, making it well-suited for circuits where derating and robust safe operating area are essential. Its 100V drain-source breakdown voltage and metal-can construction are typical of discrete power transistors specified for mission-critical systems requiring proven field performance.

This MOSFET is frequently deployed in aerospace power distribution, military avionics, satellite DC-DC converters, and industrial motor controls operating in harsh or extended-temperature environments. The TO-39 form factor remains common in legacy high-reliability designs, often necessitating form-fit-function replacements. Procurement engineers should evaluate the product’s lifecycle status, as Infineon’s heritage International Rectifier portfolio includes devices that may face obsolescence. For defense and space programs, verifying active production status and considering MIL-PRF-19500 screened equivalents—such as JANTX or JANTXV grades—is recommended to ensure long-term availability with full traceability and lot-level testing documentation. The IRFF130 serves both new high-reliability designs and sustaining engineering efforts where hermeticity, repeatable thermal performance, and extended operational life are non-negotiable.