Overview
IRF7306 is a dual P-channel HEXFET power MOSFET rated for -30 V operation in an SO-8 surface-mount package. The Infineon datasheet specifies up to -3.6 A continuous drain current at 25°C, 0.10 Ω maximum RDS(on) at VGS = -10 V, and a -55°C to +150°C junction and storage temperature range. It is intended for compact power-switching applications.
Additional Information
ManufacturerIR
Part NumberIRF7306
PackageSOP-8
CategoryDiscrete Semiconductors
Available Stock5 pcs
Date Code12+
Technical Specifications
| Attribute | Value |
|---|---|
| Type | Dual P-channel Power MOSFET |
| Technology | HEXFET |
| Drain-Source Voltage | -30 V |
| Continuous Drain Current at 25°C | -3.6 A |
| Maximum RDS(on) at VGS = -10 V | 0.10 Ω |
| Gate-Source Voltage | ±20 V |
| Package | SO-8 |
| Junction and Storage Temperature | -55°C to +150°C |
