MR2A16AVYS35

The MR2A16AVYS35 from Teledyne e2v is a high-reliability asynchronous static random-access memory (SRAM) organized as 2M × 16 bits, delivering 16 Mbit density at a 3.3 V supply voltage with a 35 ns access time. Housed in a TSOP package, it offers a compact footprint for dense board layouts. The asynchronous architecture eliminates the need for an external clock, simplifying system timing; read and write cycles are controlled by standard chip-enable, output-enable, and write-enable signals. Low standby current and a wide voltage margin make the device well-suited for battery-backed data retention where long-term non-volatile memory emulation is required.

Typical applications include embedded data buffers in industrial automation controllers, flight-critical parameter storage in avionics computers, and secure key storage in defense communication equipment. The part is engineered for environments where deterministic latency and robust data integrity are non-negotiable. From a procurement standpoint, Teledyne e2v’s semiconductor portfolio is aligned with long-lifecycle support, reducing obsolescence risk in aerospace and defense programs that span decades. While this specific part number does not carry an explicit MIL-STD-883 screening suffix, the manufacturer’s controlled fabrication and test flows are consistent with high-reliability practices; design teams should verify available temperature ranges, optional burn-in, and upscreening services to match end-use environmental requirements.