EV2A16AMNYU35

EV2A16AMNYU35 is a Teledyne e2v nonvolatile magnetoresistive RAM (MRAM), not a 16 Mbit SRAM. The EV2A16A datasheet specifies 4,194,304 bits arranged as 262,144 words of 16 bits: 256K × 16, or 4 Mbit. It uses a 3.3 V supply and a 35 ns read/write timing set, with separate upper- and lower-byte controls.

What does MNYU35 mean? In the manufacturer's ordering diagram, M selects -55°C to +125°C operation, N identifies TSOP II, Y denotes the RoHS-compliant option, U is the upscreening designation and 35 is the 35 ns timing set. The package is a 44-lead, 400-mil TSOP II. Confirm the full marking and the required screening paperwork rather than ordering only by the EV2A16A family name.

Does the data disappear when power is removed? MRAM is nonvolatile and does not need periodic refresh. The datasheet specifies a minimum 20-year data-retention characteristic. This is a device specification, not proof of the contents, handling or condition of a particular stock lot. The memory may contain previously written data, so establish the required blank or initialized state before use.

Can it replace any asynchronous SRAM? No automatic substitution should be assumed. Compare density, pinout, byte controls, bus timing, voltage limits and power-up/power-down write protection against the approved design. A familiar SRAM-style interface alone does not establish compatibility.

For a quote, specify EV2A16AMNYU35, quantity, accepted date codes and required lot evidence. Ask about actual marking photos, packing and moisture-handling records, traceability and screening documentation. Technical reference checked October 24, 2026: Teledyne e2v EV2A16A datasheet 0918F, July 2015, pages 1, 4 and 13; the download is linked from Teledyne e2v's official EV2A16A product page.