IDT7187L55DB

The IDT7187L55DB is a 64K x 1-bit CMOS static RAM (SRAM) manufactured by Renesas Electronics (formerly Integrated Device Technology), designed for high-speed, low-power memory buffering and data storage. Fabricated on advanced silicon-gate CMOS technology, the device combines fast access times with minimal standby current, making it ideal for battery-backed and power-sensitive systems. The “L” designation indicates a low-power variant, and the “-55” speed grade identifies a 55 ns access time. Housed in a ceramic dual in-line package (CDIP), the part provides a hermetic seal that ensures robust protection against moisture and contamination, enabling reliable operation across a wide industrial or military temperature range, typically from -55°C to +125°C.

Typical deployment scenarios include mission-critical avionics, radar processing, guidance and navigation computers, deep-space telemetry, and ruggedized industrial controllers where deterministic write-cycle timing and radiation tolerance are essential. The CDIP package and underlying design support system-level compliance with high-reliability standards, making the IDT7187L55DB suitable for defense and aerospace programs that demand long-term availability and traceability. Procurement professionals should note that this is a legacy product from the IDT portfolio, now managed under Renesas; while not necessarily active for new designs, it remains obtainable through specialized distribution channels to sustain existing fielded platforms. Engineers evaluating this SRAM should verify the exact screening flow (e.g., MIL-STD-883, QML, or industrial grade) based on the full part number suffix and lot documentation to ensure alignment with program qualification requirements.