The JANTX2N6798 from Infineon is a 200V N-channel enhancement-mode power MOSFET housed in a hermetically sealed TO-39 metal can. Screened to JANTX levels under MIL-PRF-19500 and listed on the Qualified Products List (QPL), the device delivers low on-resistance, fast switching, and robust avalanche energy capability for high-reliability power switching applications. Its single-die design typically provides a wide safe operating area, while the TO-39 package ensures excellent thermal conductivity and environmental isolation, making it suited for compact circuits where long-term stability is mandatory.
Typical deployments include military and aerospace DC-DC converters, motor drives, actuator controls, and solid-state power distribution switches in avionics, satellite payloads, and ground-based defense systems. From a procurement standpoint, the JANTX prefix indicates full military screening with burn-in, hermeticity testing, and traceability, mitigating infant mortality risks in mission-critical platforms. While Infineon maintains the part within its high-reliability discrete portfolio, sourcing through authorized distributors with documented QPL status and lifecycle data remains essential to manage lead-time variation and potential obsolescence notices in long-fielded military programs.
| Attribute | Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42.07 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/557 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-205AF (TO-39) |
| Package / Case | TO-205AF Metal Can |
| Continuous Drain Current @ TC = 100°C (ID) | 3.5 A |
| Continuous Drain Current @ TC = 25°C (ID) | 5.5 A |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 200 V (min) |
| Drain-Source Voltage (VDS) | 200 V |
| Gate Threshold Voltage (VGS(th)) | 2 V ~ 4 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 600 pF |
| Pulsed Drain Current (IDM) | 22 A |
| Static Drain-Source On-State Resistance (RDS(on)) | 0.4 Ω (max) |
| Thermal Resistance Junction to Case (RθJC) | 5 °C/W (max) |
| Total Power Dissipation @ TC = 25°C (PD) | 25 W |
| Zero Gate Voltage Drain Current (IDSS) | 25 µA (max) |
| Junction Temperature Range (TJ) | -55 to +150 °C |
| Base Device | 2N6798 |
| Forward Transconductance (gfs) | 2.5 S (min) |
Download the current available datasheet for JANTX2N6798.
Download Datasheet
