| Attribute | Value |
|---|---|
| Continuous Drain Current | -10 A @ TA = 25°C, VGS @ -10V |
| Diode Forward Voltage | -1.0 V (max) @ IS = -5.6A |
| Drain-to-Source Breakdown Voltage | -30 V (min) |
| Gate Threshold Voltage | -1.0 V (min) |
| Gate-to-Source Voltage | ±20 V |
| On-Resistance | 0.020 Ω (max) @ VGS = -10V, ID = -5.6A |
| On-Resistance (low VGS) | 0.035 Ω (max) @ VGS = -4.5V, ID = -2.8A |
| Power Dissipation | 2.5 W @ TA = 25°C |
| Pulsed Drain Current | -45 A |
| Junction and Storage Temperature Range | -55 to +150 °C |
| Single Pulse Avalanche Energy | 370 mJ |
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