The Aeroflex Circuit Technology ACT-S512K32N-020F2Q is a high-reliability 512K x 32 static random-access memory (SRAM) multichip module, delivering a 20 ns access time within a hermetic ceramic quad flat pack (CQFP) package. As part of the ACT-S512K32N family, this device combines multiple memory die to form a 16-megabit word-wide storage solution optimized for processor-based systems that demand deterministic, fast data retrieval under severe environmental stress. The CQFP construction offers robust thermal dissipation and mechanical durability, while the module’s architecture is engineered for extended temperature performance and inherent resistance to shock, vibration, and long-term reliability degradation common in defense-grade electronics.
Typical applications include solid-state mission recorders, radar signal processing, guidance and navigation computers, and space-qualified avionics where memory data integrity directly impacts system safety and mission success. Procurement considerations for this category center on extended lead times and lifecycle management, as high-reliability SRAM multichip modules frequently encounter constrained supply chains and manufacturer-driven obsolescence. The F2Q suffix indicates a defined screening and conformance testing flow, generally aligning with MIL-PRF-38535 QML or equivalent defense standards, which provides lot traceability, serialization, and certified reliability documentation essential for qualification in military and aerospace programs. Validation of active lifecycle status and authorized sourcing are critical steps when specifying this device.
| Attribute | Value |
|---|---|
| Operating Temperature | -55°C ~ 125°C |
| Memory Size | 512K x 32 |
| Qualification | MIL-STD-883 |
| Package / Case | CQFP |
| Mounting Type | Surface Mount |
| Pin Count | 68 |
| Pinout Option (the N in the part number) | None |
| Maximum Package Power Dissipation | 3.0 W |
| Maximum Signal Voltage to Ground | -0.5 V to +7 V |
| Operating Supply Current | 600 mA (32 Bit Mode) |
| Standby Current | 80 mA |
| Supply Voltage | +4.5 V to +5.5 V |
| Thermal Resistance (Junction to Case) | 5 °C/W |
| Address Access Time | 20 ns |
| Storage Temperature | -65°C to +150°C |
| Description / Density | High Speed 16 Megabit SRAM Multichip Module |
| Organization | 512K x 32, user configurable as 1M x 16 or 2M x 8 |
| Screening Level | MIL-PRF-38534 Compliant/SMD |
Download the current available datasheet for ACT-S512K32N-020F2Q.
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