High-reliability -100V P-channel MOSFET, JANTXV grade (2N6849 / IRFF9130 family)
| Attribute | Value |
|---|---|
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/564 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-205AF (TO-39) |
| Package / Case | TO-205AF Metal Can |
Download the current available datasheet for JANTXV2N6849.
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