Industry certifications and quality credentials
JANTX2N6287 Microchip Technology TO-3P integrated circuit
Part Number

JANTX2N6287

Microchip Technology TO-3P Integrated Circuits
Available Stock
100 pcs
Lifecycle: Active
In production
Manufacturer
Microchip Technology
Package
TO-3P
Stock
100 pcs
Date Code
2238
Datasheet
Open PDF

Overview

The JANTX2N6287 is an N-channel power MOSFET manufactured by Microchip Technology, designed for high-reliability switching and power management applications. This device belongs to a category of discrete semiconductors built to JANTX screening levels under the MIL-PRF-19500 specification, ensuring consistent electrical performance and traceability for military and space-grade systems. Housed in a TO-3P package, it provides robust thermal dissipation and mechanical durability suited for demanding environments. Typical characteristics for this product family include high drain-to-source voltage capability, low on-resistance to minimize conduction losses, and fast switching speeds that reduce power dissipation in pulse-width modulated circuits. The construction is optimized for ruggedness, often featuring avalanche energy rating and a wide operating temperature range that supports extended mission profiles.

Typical end-use scenarios span power supply modules, motor drive circuits, electronic load banks, and actuator controls deployed in defense avionics, satellite power distribution units, and industrial high-reliability infrastructure. The part is well-suited for DC-DC converters, solid-state switching, and line regulation circuits where failure is not an option. As a QPL-listed JANTX device, procurement engineers benefit from documented lot acceptance testing, material pedigree, and long-term support common to Microchip’s HiRel portfolio. While obsolescence risk is mitigated through the manufacturer’s ongoing commitment to legacy military standards programs, designers should still verify the latest qualification status and consider applicable derating guidelines for mission-critical designs.

Additional Information

Part NumberJANTX2N6287
PackageTO-3P
Available Stock100 pcs
Date Code2238

Technical Specifications

Attribute Value
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 20 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1250 @ 10A, 3V
Power - Max 175 W
Operating Temperature -65°C ~ 175°C (TJ)
Grade Military
Qualification MIL-PRF-19500/505
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Lead Finish Solder dipped tin-lead over nickel plated alloy 52 or RoHS-compliant matte-tin
Base-Emitter On Voltage -2.8 V (max)
Base-Emitter Saturation Voltage -4.0 V (max)
Collector Current -20 A
Collector Cutoff Current -1.0 mA (max) @ VCE = -50 V
Collector-Base Voltage -100 V
Collector-Emitter Breakdown Voltage -100 V (min)
Collector-Emitter Saturation Voltage (IC = -10 A) -2.0 V (max)
Collector-Emitter Saturation Voltage (IC = -20 A) -3.0 V (max)
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -7 V
Forward-Current Transfer Ratio (IC = -1.0 A) 1,500 (min) / 18,000 (max)
Forward-Current Transfer Ratio (IC = -10 A) 1,250 (min)
Forward-Current Transfer Ratio (IC = -20 A) 300 (min)
Thermal Resistance Junction-to-Case 0.855 °C/W
Total Power Dissipation @ TC = +100 °C 87.5 W
Total Power Dissipation @ TC = +25 °C 175 W
Junction and Storage Temperature -65 to +175 °C
Base Device 2N6287
Device Type PNP Darlington Power Silicon Transistor
Screening Level JANTX

Datasheet

Download the current available datasheet for JANTX2N6287.

Download Datasheet

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