The JANTX2N6287 is an N-channel power MOSFET manufactured by Microchip Technology, designed for high-reliability switching and power management applications. This device belongs to a category of discrete semiconductors built to JANTX screening levels under the MIL-PRF-19500 specification, ensuring consistent electrical performance and traceability for military and space-grade systems. Housed in a TO-3P package, it provides robust thermal dissipation and mechanical durability suited for demanding environments. Typical characteristics for this product family include high drain-to-source voltage capability, low on-resistance to minimize conduction losses, and fast switching speeds that reduce power dissipation in pulse-width modulated circuits. The construction is optimized for ruggedness, often featuring avalanche energy rating and a wide operating temperature range that supports extended mission profiles.
Typical end-use scenarios span power supply modules, motor drive circuits, electronic load banks, and actuator controls deployed in defense avionics, satellite power distribution units, and industrial high-reliability infrastructure. The part is well-suited for DC-DC converters, solid-state switching, and line regulation circuits where failure is not an option. As a QPL-listed JANTX device, procurement engineers benefit from documented lot acceptance testing, material pedigree, and long-term support common to Microchip’s HiRel portfolio. While obsolescence risk is mitigated through the manufacturer’s ongoing commitment to legacy military standards programs, designers should still verify the latest qualification status and consider applicable derating guidelines for mission-critical designs.
| Attribute | Value |
|---|---|
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1250 @ 10A, 3V |
| Power - Max | 175 W |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/505 |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Supplier Device Package | TO-3 |
| Lead Finish | Solder dipped tin-lead over nickel plated alloy 52 or RoHS-compliant matte-tin |
| Base-Emitter On Voltage | -2.8 V (max) |
| Base-Emitter Saturation Voltage | -4.0 V (max) |
| Collector Current | -20 A |
| Collector Cutoff Current | -1.0 mA (max) @ VCE = -50 V |
| Collector-Base Voltage | -100 V |
| Collector-Emitter Breakdown Voltage | -100 V (min) |
| Collector-Emitter Saturation Voltage (IC = -10 A) | -2.0 V (max) |
| Collector-Emitter Saturation Voltage (IC = -20 A) | -3.0 V (max) |
| Collector-Emitter Voltage | -100 V |
| Emitter-Base Voltage | -7 V |
| Forward-Current Transfer Ratio (IC = -1.0 A) | 1,500 (min) / 18,000 (max) |
| Forward-Current Transfer Ratio (IC = -10 A) | 1,250 (min) |
| Forward-Current Transfer Ratio (IC = -20 A) | 300 (min) |
| Thermal Resistance Junction-to-Case | 0.855 °C/W |
| Total Power Dissipation @ TC = +100 °C | 87.5 W |
| Total Power Dissipation @ TC = +25 °C | 175 W |
| Junction and Storage Temperature | -65 to +175 °C |
| Base Device | 2N6287 |
| Device Type | PNP Darlington Power Silicon Transistor |
| Screening Level | JANTX |
Download the current available datasheet for JANTX2N6287.
Download Datasheet