IDT7164S20TDB

The IDT7164S20TDB is a high-speed CMOS static random-access memory (SRAM) device from Renesas Electronics (originally developed by Integrated Device Technology), organized as 8,192 words by 8 bits for a total 64K memory density. Fabricated using advanced silicon-gate CMOS technology, it delivers fast asynchronous access times—the “-20” speed grade indicating a 20 ns rating—while maintaining low active and standby power consumption, a characteristic essential for power-sensitive embedded systems. Housed in a ceramic dual in-line package (CDIP), the component provides excellent thermal and environmental resilience, ensuring stable operation across extended temperature ranges and under mechanical stress typical of high-reliability deployments.

Typical applications span mission-critical embedded platforms, including military avionics computers, radar and electronic warfare signal processors, industrial programmable logic controllers, and aerospace guidance subsystems where deterministic non-volatile operation is not required but fast, reliable scratchpad memory is essential. The CDIP package and legacy design make this part a common choice in extended-life defense programs and high-temperature industrial applications. Procurement engineers should note that, as a mature Renesas/IDT product, the 7164S20TDB may face obsolescence risks and constrained availability; verifying active lifecycle status and requesting a certificate of conformance for any military-standard processing (such as MIL-STD-883 screening when applicable) is strongly recommended. Designing in a compatible low-power SRAM with this footprint also demands attention to supply chain lead times, authentic sourcing, and the need for electrostatic discharge (ESD) and moisture-sensitive handling procedures commensurate with ceramic-packaged ICs.